† Corresponding author. E-mail:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61604016 and 51501017) and the Fundamental Research Funds for the Central Universities, China (Grant No. 310831161003).
La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However, the hygroscopic nature of La2O3 hampers its application as dielectrics in electron devices. To cope with this challenge, ultraviolet (UV) ozone post treatment is proposed to suppress the moisture absorption in the H2O-based atomic layer deposition (ALD) La2O3/Al2O3 nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing. The x-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (AFM) results indicate that the moisture absorption of the H2O-based ALD La2O3/Al2O3 nanolaminates is efficiently suppressed after 600 °C annealing, and the electrical characteristics are greatly improved.
Recently, rare earth oxides, such as La-based binary or ternary compounds, are receiving a lot of attention for their potential use as the second generation high dielectric constant materials instead of the currently used Hf-based dielectrics in future transistor and capacitor devices.[1–3] These materials show interesting properties such as a high permittivity, large band gap, and high crystallization temperature.[4–6] To obtain the thin films, atomic layer deposition (ALD) is the preferred deposition technique because of its low deposition temperature, excellent thickness and composition control, and conformal growth.[7] For high-κ oxide ALD deposition, H2O is a more commonly used oxidant than O3 because O3 is not stable and the expensive production equipment is always needed. However, due to the well-known hygroscopic nature of La2O3, exposure to ambient moisture can potentially deteriorate its dielectric properties such as roughness enhancement, large leakage current, and low dielectric constant.[8,9] Therefore, the dielectric properties should include the resistance to the moisture absorption. Mixing with a less hygroscopic oxide such as Al2O3 has been proved to stabilize the lanthanide oxide.[10] Furthermore, it combines the advantages of the high-κ of La2O3 and the chemical and thermal stability of Al2O3. However, the La2O3/Al2O3 nanolaminates may still suffer from the moisture absorption because H2O tends to physisorb on the surface strongly and contributes to a high concentration of hydroxyl/hydrogen groups in the nanolaminates although the purge time is sufficient.
The ultraviolet (UV) ozone post treatment has been proposed as an effective method for suppressing the moisture absorption of La2O3 films in the air.[11] Furthermore, the UV ozone treatment can be used at low temperatures, preventing thick interface layer formation compared with oxygen ambient annealing at high temperature.[12] Since this topic can be crucial for the successful inclusion of high-κ dielectrics in electron devices, its potential application in the thin La2O3/Al2O3 nanolaminates is investigated in this paper. The La2O3/Al2O3 nanolaminates treated with or without an UV ozone post treatment are investigated by x-ray photoelectron spectroscopy (XPS), conductive atomic force microscopy (AFM), and electrical measurements. The results indicate that La2O3/Al2O3 nanolaminates treated with the UV ozone post treatment suppress the moisture absorption and improve the C–V characteristics.
Prior to the deposition, 8–12 Ω·cm P-type Si(100) wafers were RCA cleaned and a 30 s dip in diluted HF solution was used to remove the native oxide, followed by a 60 s rinse in deionized water. Tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)3] was used as the lanthanum precursor and trimethylaluminum (TMA) was used as the aluminum precursor. The container of the lanthanum precursor was heated to 180 °C and the aluminum precursor was at room temperature, corresponding to the vapor pressure of 10 hPa to 15 hPa. When H2O was used as the oxidant, the container was set at the room temperature, corresponding to a vapor pressure of 7 hPa. La2O3/Al2O3 nanolaminates were formed by the periodic stacking of bilayer structures to form thicker multilayers. Different thickness La2O3/Al2O3 nanolaminates were deposited on the Si substrates by ALD at 300 °C. Some samples were treated with UV ozone post treatment by an UV ozone ProCleaner plus system for 25 min at room temperature. After all the nanolaminates were annealed in nitrogen at 600 °C for 60 s, the XPS, AFM, and electrical measurements were carried out to investigate the characteristics of the La2O3/Al2O3 nanolaminates. The XPS measurements were carried out by using monochromatic Al Kα x-ray (hν = 1486.7 eV). The AFM and CAFM measurements were carried out by a Bruker Dimension Edge system. The electrical measurements were carried out using a Keithley 590 C–V meter.
Figure
Figure
In order to confirm that the moisture absorption occurs in the La2O3/Al2O3 nanolaminate without UV ozone post treatment after annealing, figure
Figure
As shown in Figs.
In order to evaluate the moisture absorption effect on the properties of the La2O3/Al2O3 nanolaminates before and after annealing, the valence band offset is determined by using the method proposed by Kraut[15]
Figure
The band offset change after annealing should result in a shift in VFB.[17,18] Figure
The electrical properties of H2O-based ALD La2O3/Al2O3 nanolaminates on the Si substrate can be substantially improved by UV ozone post treatment after annealing. Moisture absorption occurs obviously for the non UV ozone post treatment samples after annealing, whereas it is suppressed in the UV ozone post treatment samples. The XPS results indicate that the UV ozone post treatment has the effect of oxygen vacancy healing and suppressing the vacancies reacted with water to form OH− groups. As a result, a small thickness variation, a smooth roughness surface, and negligible VBO variation are observed for the UV ozone post treated samples compared with the non UV ozone post treated samples after annealing. The current images measured by CAFM and the C–V measurement results indicate that after UV ozone post treatment, the La2O3/Al2O3 nanolaminates present a good C–V characteristic, high permittivity, and less conductive feature.
[1] | |
[2] | |
[3] | |
[4] | |
[5] | |
[6] | |
[7] | |
[8] | |
[9] | |
[10] | |
[11] | |
[12] | |
[13] | |
[14] | |
[15] | |
[16] | |
[17] | |
[18] |